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publication date : nov 2011 1 < silicon rf power mos fet ( discrete ) > rd 01mus 2b rohs compliance, sil icon mosfet power transistor 527mhz,1 w description RD01MUS2B is a mos fet type transistor specifically designed for v hf /uhf rf amplifi ers applications. this device has an internal monolithic zener diode from gate to source for esd protection. features ? high power g ain and high efficiency. pout 1.6 w typ, gp 15 db typ, 70%typ @vdd=7.2v,f= 527 mhz ? integrated gate protection diode application for output stage of high power amplifiers in vhf/uhf band mobile radio sets. rohs compliance RD01MUS2B - 101,t113 is a rohs compliant products. this product includes the lead in high melting temperature type solders. how ever, it is applicable to the following exceptions of rohs directions. 1.lead in high melting temperature type solders ( i.e.tin - lead solder alloys containing more than85% lead.) absolute maximum ratings (tc=25 c unless otherwise noted) sy mbol parameter conditions ratings unit vdss drain to source voltage vgs=0v 25 v vgss gate to source voltage vds=0v - 5/+ 1 0 v pch channel dissipation t c =25 c 3.6 w pin input power zg=zl=50 ? 100 mw id drain current - 600 ma tch channel temperature - 150 c tstg storage temperature - - 40 to +1 25 c rth j - c thermal resistance junction to case 34.5 c/w schematic drawing note: above parameters are guaranteed independently. g s d outline drawing lot no. 0.4+/-0.07 1 2 3 0 . 8 m i n 0.4+/-0.07 0.5+/-0.07 1.5+/-0.1 0.1 max 1.5+/-0.1 2 . 5 + / - 0 . 1 type name 1.6+/-0.1 0 . 1 4.4+/-0.1 +0.03 -0.05 terminal no. 1 : gate 2 : sourse 3 : drain unit : mm 0.4 3 . 9 + / - 0 . 3 1.5+/-0.1
< silicon rf power mos fet ( discrete ) > rd0 1mus2b rohs compliance, si licon mosfet power transistor 5 27mhz,1 w public ation date : nov 2011 2 electrical characteristics (tc=25 c , unless otherwise noted) limits unit symbol parameter conditions min typ max i dss zero gate voltage drain current v ds =17v, v gs =0v - - 50 u a i gss gate to source leak current v gs = 10 v, v ds =0v - - 1 u a v th gate threshold voltage v ds = 7.2 v, i ds =1 ma 0.5 1.0 1.5 v pout output power 1.0 1.6 - w ? d drain efficiency v d d = 7.2v, pin= 30m w f= 527 mhz * , idq= 40ma 60 70 - % note: above parameters, ratings, limits and conditions are subject to change. * in mitsubishi 527mhz test circuit
< silicon rf power mos fet ( discrete ) > rd0 1mus2b rohs compliance, si licon mosfet power transistor 5 27mhz,1 w public ation date : nov 2011 3 typical characteristics (these are only typical curves and devices are not necessarily guaranteed at these curves.) vds-ids characteristics 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 vds(v) i d s ( a ) vgs= 9v vgs=10v vgs= 8v vgs= 2v vgs= 7v vgs= 6v vgs= 5v vgs= 4v vgs= 3v ta=+25 vgs-ids characteristics 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 vgs (v) i d s ( a ) ta=+25 vds=10v vds vs. ciss characteristics 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 vds(v) c i s s ( p f ) ta=+25 f=1mhz vds vs. coss characteristics 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 vds(v) c o s s ( p f ) ta=+25 f=1mhz vds vs. crss characteristics 0 1 2 3 4 0 5 10 15 20 vds(v) c r s s ( p f ) ta=+25 f=1mhz channel dissipation vs. ambient temperature 0 1 2 3 4 0 40 80 120 160 200 ambient temperature ta(c) c h a n n e l d i s s i p a t i o n p c h ( w ) . . . on pcb(*1) on pcb(*1) with heat-sink *1:the material of the pcb glass epoxy (t=0.6 mm)
< silicon rf power mos fet ( discrete ) > rd0 1mus2b rohs compliance, si licon mosfet power transistor 5 27mhz,1 w public ation date : nov 2011 4 uhf - band,527mhz, typical characteristics (these are only typical curves and devices are not necessarily guaranteed at these curves.) vdd-po characteristics @f=527mhz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 3 4 5 6 7 8 9 10 vdd(v) p o u t ( w ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 d r a i n e f f i ( % ) , g p ( d b ) ta=+25 f=527mhz pin=30mw idq= 40ma po d gp idd idd vgg-po characteristics @f=527mhz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 vgg(v) p o u t ( w ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 d r a i n e f f i ( % ) , g p ( d b ) d po gp idd ta=+25 f=527mhz pin=30mw vds=7.2v idq= 40ma frequency characteristics @f=527mhz 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 500 510 520 530 540 550 560 f (mhz) p o u t ( w ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 90 d r a i n e f f i ( % ) , g p ( d b ) po d gp idd pin=30mw, vds=7.2v idq=40ma(@vds=7.2v, vgs adj) pin vs po characteristics@f=527mhz 0 5 10 15 20 25 30 35 40 -10 -5 0 5 10 15 20 pin(dbm) p o u t ( d b m ) , g p ( d b ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 d r a i n e f f i ( % ) po gp d idd ta=+25 f=527mhz vds=7.2v idq= 40ma pin vs po characteristics@f=527mhz 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 10 20 30 40 50 60 pin(mw) p o ( w ) i d d ( a ) 0 10 20 30 40 50 60 70 80 d r a i n e f f i ( % ) po d idd ta=+25 f=527mhz vds=7.2v idq= 40ma
< silicon rf power mos fet ( discrete ) > rd0 1mus2b rohs compliance, si licon mosfet power transistor 5 27mhz,1 w public ation date : nov 2011 5 equivalent circuitry for test circuit (f= 527 mhz) c1 1000 pf chip ceramic capacitiors c2 10 pf chip ceramic capacitiors c3 33 pf chip ceramic capacitiors c4 22 pf chip ceramic capacitiors c5 12 pf chip ceramic capacitiors c6 3 pf chip ceramic capacitiors c7 1000 pf chip ceramic capacitiors c8 0.022 f chip ceramic capacitiors c9 1000 pf chip ceramic capacitiors c10 82 pf chip ceramic capacitiors c11 82 pf chip ceramic capacitiors c12 0.022 f chip ceramic capacitiors c13 1000 pf chip ceramic capacitiors c14 22 f electrolytic capacitior r1 4.7k ohm chip resistors r2 100 ohm chip resistors r3 0 ohm chip resistors l1 8 nh enameled wire 2turns, d:0.23mm, inside: 1.1mm l2 8 nh enameled wire 2turns, d:0.23mm, inside: 1.1mm l3 12 nh enameled wire 3turns, d:0.23mm, inside: 1.1mm l4 12 nh enameled wire 3turns, d:0.23mm, inside: 1.1mm l5 29 nh enameled wire 6turns, d:0.40mm, inside: 1.6mm * inductor of rolling coil measurement condition : f=100mhz
< silicon rf power mos fet ( discrete ) > rd0 1mus2b rohs compliance, si licon mosfet power transistor 5 27mhz,1 w public ation date : nov 2011 6 f=527mhz zo=50ohm zin* (f=527mhz) f=527mhz zo=50ohm zout* (f=527mhz) @pin=30mw, vds=7.2v,idq=40ma f (mhz) 527 12.67 + j 6.67 zout*: complex conjugate of output impedance zout* (ohm) @pin=30mw, vds=7.2v,idq=40ma f (mhz) 527 5.93 + j 15.54 zin*: complex conjugate of intput impedance zin* (ohm)
< silicon rf power mos fet ( discrete ) > rd0 1mus2b rohs compliance, si licon mosfet power transistor 5 27mhz,1 w public ation date : nov 2011 7 vhf - band typical characteristics (the se are only typical curves and devices are not necessarily guaranteed at these curves.) vdd-po characteristics @f=135/155/175mhz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 3 4 5 6 7 8 9 10 vdd(v) p o u t ( w ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 d r a i n e f f i ( % ) , g p ( d b ) d po gp idd : f=135mhz : f=155mhz : f=175mhz ta=+25 f=135/155/175mhz pin=30mw idq=40ma pin vs po characteristics@f=135/155/175mhz 0 5 10 15 20 25 30 35 40 -10 -5 0 5 10 15 20 pin(dbm) p o u t ( d b m ) , g p ( d b ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 d r a i n e f f i ( % ) po gp d : f=135mhz : f=155mhz : f=175mhz idd ta=+25 f=135/155/175mhz vds=7.2v idq= 40ma vgg-po characteristics @f=135/155/175mhz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 vgg(v) p o u t ( w ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 d r a i n e f f i ( % ) , g p ( d b ) d po gp idd : f=135mhz : f=155mhz : f=175mhz ta=+25 f=135/155/175mhz pin=30mw vds=7.2v idq= 40ma frequency characteristics @f=135-175mhz 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 130 140 150 160 170 180 f (mhz) p o u t ( w ) , i d d ( a ) 0 20 40 60 80 100 120 140 160 180 d r a i n e f f i ( % ) , g p ( d b ) po d gp idd pin=30mw, vds=7.2v idq=40ma(@vds=7.2v, vgs adj) pin vs po characteristics@f=135/155/175mhz 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 10 20 30 40 50 60 pin(mw) p o ( w ) i d d ( a ) 0 10 20 30 40 50 60 70 80 d r a i n e f f i ( % ) po d idd : f=135mhz : f=155mhz : f=175mhz
< silicon rf power mos fet ( discrete ) > rd0 1mus2b rohs compliance, si licon mosfet power transistor 5 27mhz,1 w public ation date : nov 2011 8 equivalent circuitry for vhf evaluation board (f= 135 ? 175 mhz) for more information regarding this evaluation board, refer to application note ? an - vhf - 055 ? c1 160 pf chip ceramic capacitiors c2 36 pf chip ceramic capacitiors c3 22 pf chip ceramic capacitiors c4 27 pf chip ceramic capacitiors c5 22 pf chip ceramic capacitiors c6 430 pf chip ceramic capacitiors c7 10 pf chip ceramic capacitiors c8 7 pf chip ceramic capacitiors c9 18 pf chip ceramic capacitiors c10 160 pf chip ceramic capacitiors c11 1000 pf chip ceramic capacitiors c12 0.022 f chip ceramic capacitiors c13 1000 pf chip ceramic capacitiors c14 0.022 f chip ceramic capacitiors c15 22 f electrolytic capacitior r1 4.7k ohm chip resistors r2 47 ohm chip resistors l1 40 nh enameled wire 9turns, d:0.23mm, inside: 1.1mm l2 51 nh enameled wire 11turns, d:0.23mm, inside: 1.1mm l3 40 nh enameled wire 9turns, d:0.23mm, inside: 1.1mm l4 12 nh enameled wire 3turns, d:0.23mm, inside: 1.1mm l5 17 nh enameled wire 4turns, d:0.23mm, inside: 1.1mm l6 12 nh enameled wire 3turns, d:0.23mm, inside: 1.1mm l7 37 nh enameled wire 7turns, d:0.4mm, inside: 1.6mm * inductor of rolling coil measurement condition : f=100mhz
< silicon rf power mos fet ( discrete ) > rd0 1mus2b rohs compliance, si licon mosfet power transistor 5 27mhz,1 w public ation date : nov 2011 9 input / output impedance vs. frequency characteristics @pin=30mw, vds=7.2v,idq=40ma f (mhz) 135 19.81 + j 10.17 155 18.09 + j 11.73 175 16.62 + j 14.82 zout*: complex conjugate of output impedance zout* (ohm) f=175mhz f=155mhz f=135mhz zout* (f=135, 155, 175mhz) zo=50ohm f=175mhz f=155mhz f=135mhz zo=50ohm zin* (f=135, 155, 175mhz) @pin=30mw, vds=7.2v,idq=40ma f (mhz) 135 67.91 + j 54.09 155 69.90 + j 54.62 175 51.90 + j 47.13 zin*: complex conjugate of intput impedance zin* (ohm)
< silicon rf power mos fet ( discrete ) > rd0 1mus2b rohs compliance, si licon mosfet power transistor 5 27mhz,1 w public ation date : nov 2011 10 900mhz - band typical characteristics (these are only typic al curves and devices are not necessarily guaranteed at these curves.) frequency characteristics @f=890-941mhz 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 880 890 900 910 920 930 940 950 f (mhz) p o u t ( w ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 90 d r a i n e f f i ( % ) , g p ( d b ) po d gp idd pin=30mw, vds=7.2v idq=40ma(@vds=7.2v, vgs adj) vgg-po characteristics @f=890/915/941mhz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 vgg(v) p o u t ( w ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 d r a i n e f f i ( % ) , g p ( d b ) d po gp idd : f=890mhz : f=915mhz : f=941mhz ta=+25 f=890/915/941mhz pin=30mw vds=7.2v idq= 40ma vdd-po characteristics @f=890/915/941mhz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 3 4 5 6 7 8 9 10 vdd(v) p o u t ( w ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 d r a i n e f f i ( % ) , g p ( d b ) d po gp idd : f=890mhz : f=915mhz : f=941mhz ta=+25 f=890/915/941mhz pin=30mw idq=40ma pin vs po characteristics@f=890/915/941mhz 0 5 10 15 20 25 30 35 40 -10 -5 0 5 10 15 20 pin(dbm) p o ( d b m ) , g p ( d b ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 d r a i n e f f i ( % ) po gp d : f=890mhz : f=915mhz : f=941mhz idd ta=+25 f=890/915/941mhz vds=7.2v idq= 40ma pin vs pocharacteristics@f=890/915/941mhz 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 10 20 30 40 50 60 pin(mw) p o ( w ) i d d ( a ) 0 10 20 30 40 50 60 70 80 d r a i n e f f i ( % ) po d idd : f=890mhz : f=915mhz : f=941mhz ta=+25 f=890/915/941mhz vds=7.2v idq= 40ma
< silicon rf power mos fet ( discrete ) > rd0 1mus2b rohs compliance, si licon mosfet power transistor 5 27mhz,1 w public ation date : nov 2011 11 equivalent circuitry for 900mhz evaluation board (f= 890 ? 941 mhz) for more information regarding this eval uation board, refer to application note ? an - 900 - 046 ? c1 150 pf chip ceramic capacitiors c2 4 pf chip ceramic capacitiors c3 4 pf chip ceramic capacitiors c4 30 pf chip ceramic capacitiors c5 10 pf chip ceramic capacitiors c6 10 pf chip ceramic capacitiors c7 10 pf chip ceramic capacitiors c8 10 pf chip ceramic capacitiors c9 8 pf chip ceramic capacitiors c10 2 pf chip ceramic capacitiors c11 150 pf chip ceramic capacitiors c12 100 pf chip ceramic capacitiors c13 1000 pf chip ceramic capacitiors c14 100 pf chip ceramic capacitiors c15 1000 pf chip ceramic capacitiors c16 22 f electrolytic capacitior r1 18 ohm chip resistors r2 4.7k ohm chip resistors r3 0 ohm chip resistors l1 37 nh enameled wire 7turns, d:0.40mm, inside: 1.6mm *inductor of rolling coil measurement condition : f=100mhz
< silicon rf power mos fet ( discrete ) > rd0 1mus2b rohs compliance, si licon mosfet power transistor 5 27mhz,1 w public ation date : nov 2011 12 @pin=30mw, vds=7.2v,idq=40ma f (mhz) 890 2.09 + j 2.48 915 2.19 + j 2.78 941 2.37 + j 2.82 zin*: complex conjugate of intput impedance zin* (ohm) f=890mhz f=941mhz f=915mhz zin* (f=890, 915, 941mhz) zo=50ohm f=890mhz f=915mhz f=941mhz zout* (f=890, 915, 941mhz) zo=50ohm @pin=30mw, vds=7.2v,idq=40ma f (mhz) 890 8.80 - j 0.18 915 8.60 + j 0.37 941 8.39 + j 1.01 zout*: complex conjugate of output impedance zout* (ohm)
< silicon rf power mos fet ( discrete ) > rd0 1mus2b rohs compliance, si licon mosfet power transistor 5 27mhz,1 w public ation date : nov 2011 13 RD01MUS2B s - parameter data (@vdd=7.2v, id=40ma) freq. [ mhz ] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 100 0.896 -71.0 22.155 135.1 0.029 46.0 0.775 -56.6 135 0.862 -84.5 19.556 126.6 0.033 37.5 0.730 -68.2 155 0.847 -92.3 17.994 121.7 0.035 32.3 0.705 -74.9 175 0.835 -99.1 16.612 117.4 0.036 28.1 0.685 -80.9 200 0.823 -106.4 15.109 112.9 0.038 23.9 0.667 -87.3 250 0.809 -118.1 12.570 105.0 0.039 17.0 0.647 -97.8 300 0.803 -127.0 10.682 98.8 0.039 10.9 0.640 -105.8 350 0.800 -134.0 9.167 93.6 0.039 6.3 0.641 -112.5 400 0.801 -139.4 7.939 89.5 0.038 2.7 0.648 -118.1 450 0.806 -144.1 6.970 85.5 0.037 -0.2 0.660 -122.9 500 0.810 -148.0 6.160 82.2 0.036 -3.1 0.673 -127.2 520 0.813 -149.4 5.834 80.9 0.036 -4.4 0.679 -128.6 530 0.814 -150.1 5.698 80.5 0.035 -5.0 0.682 -129.4 550 0.816 -151.4 5.455 79.7 0.034 -5.8 0.687 -131.0 600 0.825 -154.5 4.898 77.1 0.033 -7.0 0.702 -134.4 650 0.831 -157.2 4.406 74.1 0.032 -8.9 0.718 -137.6 700 0.838 -159.6 3.969 72.6 0.030 -10.3 0.733 -140.6 750 0.845 -161.9 3.606 70.9 0.029 -11.5 0.746 -143.5 800 0.852 -164.0 3.249 68.9 0.027 -12.6 0.760 -146.2 850 0.859 -166.1 2.960 67.1 0.026 -12.8 0.774 -148.6 900 0.865 -167.9 2.703 67.2 0.025 -13.7 0.784 -151.1 950 0.870 -169.6 2.487 65.5 0.023 -14.2 0.795 -153.4 1000 0.876 -171.3 2.290 65.1 0.022 -14.7 0.805 -155.5 1050 0.882 -172.9 2.108 64.2 0.021 -13.9 0.816 -157.6 1100 0.887 -174.4 1.941 64.6 0.020 -15.9 0.825 -159.5 1150 0.891 -175.9 1.809 62.7 0.017 -16.5 0.832 -161.4 1200 0.894 -177.3 1.695 63.2 0.017 -13.3 0.841 -163.1 1250 0.898 -178.5 1.580 63.9 0.015 -13.3 0.849 -164.9 1300 0.902 -179.8 1.487 63.3 0.014 -12.0 0.856 -166.5 1350 0.907 179.0 1.387 62.5 0.013 -10.5 0.863 -168.2 1400 0.912 177.7 1.296 63.0 0.012 -8.3 0.868 -169.7 1450 0.914 176.6 1.250 62.2 0.011 -8.2 0.875 -171.1 1500 0.917 175.5 1.147 61.9 0.010 -5.0 0.880 -172.6 s11 s21 s12 s22
< silicon rf power mos fet ( discrete ) > rd0 1mus2b rohs compliance, si licon mosfet power transistor 5 27mhz,1 w public ation date : nov 2011 14 a ttention: 1.high temperature ; this product might have a heat generation while op eration,please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near t he product,do not place the combustible material that have possibilities to arise the fire. 2. generation of high frequency power ; this product generate a high frequency power. please take notice that do not leakage the unnecessary electric wave and use t his products without cause damage for human and property per normal operation. 3. before use; before use the product,please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precautions for the use of m itsubishi silicon rf power devices: 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specifi cation sheets, p lease contact one of our sales offices . 2.ra series products (rf power amplifier modules) and rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. in particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and in the application, which is base station applications and fixed station applications that oper ate with long term continuous transmission and a higher on - off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. for the reliability report which is describe d about predicted operating life time of mitsubishi silicon rf products , please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor . 3. rd series products use mosfet semiconductor technology. the y are sen sitive to esd voltage therefore a ppropriate esd precautions are required. 4. in the case of use in below than recommended frequency , t here is possibility to occur that the device is deteriorated or destroyed due to the rf - swing exceed the breakdown voltag e. 5. in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat - sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel tem perature for rd series products lower than 120deg/c(in case of tchmax=150deg/c) ,140deg/c(in case of tchmax=175deg/c) under standard conditions. 6. do not use the device at the exceeded the maximum rating condition. in case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. these results causes in fire or injury. 7. for specific precaution s regard ing assembly of these products into the equipment , please refer to the supplementary item s in the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s o riginal form. 9. for additional ?s afety first ? in your circuit design and notes regarding the materials , please refer the last page of this data sheet . 10. please refer to the additional precaution s in the formal specification sheet.
< silicon rf power mos fet ( discrete ) > rd0 1mus2b rohs compliance, si licon mosfet power transistor 5 27mhz,1 w public ation date : nov 2011 15 ? 2011 mitsubishi electric corporation. all rights reserved. keep saf ety first in your circuit designs! mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may l ead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non - flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ? these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellect ual property rights, or any other rights, belonging to mitsubishi electri c corporation or a third party. ? mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third - party?s rights, originating in the use of any p roduct data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ? all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on pr oducts at the time of publication of these material s, and are subject to change by mitsubishi electric corporation without notice due to product im provements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an authorized m itsubishi semiconductor product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. mitsubishi electric corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubishi semiconductor home page (http: //www. m itsubishi e lectric.com/). ? when using any or all of the information contained in these materials, including product dat a, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. mitsubishi electric corporation assumes no responsibility for a ny damage, liability or other loss resulting from th e information contained herein. ? mitsubishi electric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is poten tially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or underse a repeater use. ? the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce in wh ole or in part these materials. ? if these products or technologies are subject to th e japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re - export contrary to the export control laws and regulat ions of japan and/or the country of destination is prohibited. ? please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein.

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